inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2558 description collector-emitter breakdown voltage- : v (br)ceo = 200v(min) high dc current gain- : h fe = 1500( min.) @(i c = 1a, v ce = 5v) low collector saturation voltage- : v ce(sat) = 1.5v(max)@ (i c = 1a, i b = 5ma) b applications designed for series regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i b base current-continuous 2 a p c collector power dissipation @t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2558 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 200 v v ce (sat) collector-emitter saturation voltage i c = 1a ,i b = 5ma 1.5 v i cbo collector cutoff current v cb = 200v, i e = 0 0.1 ma i ebo emitter cutoff current v eb = 6v, i c = 0 5.0 ma h fe dc current gain i c = 1a; v ce = 5v 1500 6500 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 110 pf f t current-gain?bandwidth product i e = -0.5a; v ce = 10v 15 mhz isc website www.iscsemi.cn 2
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